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The Electrical and Interfacial Properties of Metal-High- \kappa Oxide-Semiconductor Field-Effect Transistors With \hbox {LaAlO}_{3} Gate Dielectric

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5 Author(s)
Chang, Ingram Yin-ku ; Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu ; You, Sheng-wen ; Pi-Chun Juan ; Wang, Ming-Tsong
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LaAlO3 is a promising candidate for gate dielectric of future VLSI devices. In this letter, n-channel metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric were fabricated, and the electron mobility degradation mechanisms were studied. The leakage current density is 7.6times10-5 A/cm2 at -1 V. The dielectric constant is 17.5. The surface-recombination velocity, the minority-carrier lifetime, and the effective capture cross section of surface states were extracted from gated-diode measurement. The rate of threshold voltage change with temperature (DeltaVT/DeltaT) from 11 K to 400 K is -1.51 mV/K, and the electron mobility limited by surface roughness is proportional to Eeff -0.66.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )