The Electrical and Interfacial Properties of Metal-High- Oxide-Semiconductor Field-Effect Transistors With Gate Dielectric

LaAlO₃ is a promising candidate for gate dielectric of future VLSI devices. In this letter, n-channel metal-oxide-semiconductor field-effect transistors with LaAlO₃ gate dielectric were fabricated, and the electron mobility degradation mechanisms were studied. The leakage current density is 7.6times10^-5 A/cm² at -1 V. The dielectric constant is 17.5. The surface-recombination velocity, the minority-carrier lifetime, and the effective capture cross section of surface states were extracted from gated-diode measurement. The rate of threshold voltage change with temperature (DeltaV_T/DeltaT) from 11 K to 400 K is -1.51 mV/K, and the electron mobility limited by surface roughness is proportional to E_eff ^-0.66.