Skip to Main Content
The fabrication of silicon shallow junction photodiodes is a relevant topic for the detection of blue and near ultraviolet weak photon fluxes. In this paper we present a simple model to calculate the quantum detection efficiency (QDE) of a Geiger mode avalanche photodiode (GMAP) as a function of the dead layer thickness above the junction depletion layer. A comparison between calculated and experimental data is also presented. Moreover, by using the same model, an analysis of the QDE at 420 nm wavelength of conventional GMAPs based on shallow N+-P and P+-N junctions is given.