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Generation and Propagation of Single Event Transients in 0.18- \mu{\rm m} Fully Depleted SOI

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11 Author(s)
Gouker, P. ; Adv. Silicon Technol. Group, MIT Lincoln Lab., Lexington, MA ; Brandt, J. ; Wyatt, P. ; Tyrrell, B.
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Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We show that the transient pulse widens as it propagates; the widening is largely eliminated by the body contact. Good agreement is observed between pulsed-laser and heavy ion testing.

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Nuclear Science, IEEE Transactions on  (Volume:55 ,  Issue: 6 )