By Topic

Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M ,\times, 4 SDRAM

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Edmonds, L.D. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA ; Scheick, L.Z.

It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro (i.e., from a single particle hit) displacement damage, which creates a leakage current that drains the storage capacitor.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:55 ,  Issue: 6 )