By Topic

Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chen Shuming ; Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha ; Liang Bin ; Liu Biwei ; Liu Zheng

Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in bulk and PD SOI inverter chains has been studied. It was found that temperature has a very important impact on digital SET. Using a LET of 60 MeVmiddotcm2 /mg, when temperature rises from -55 to 125degC , the digital SET pulse width in bulk and floating SOI inverter chains rises remarkably, while in a SOI inverter chain with ideal body tie, the digital SET pulse width is almost constant with rising temperature. Detailed analysis showed that pulse broadening with rising temperature is primarily due to enhancement of bipolar amplification.

Published in:

IEEE Transactions on Nuclear Science  (Volume:55 ,  Issue: 6 )