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Most pulse width characterization circuits measure single-event transients (SETs) using a target circuit consisting of long inverter chains or temporal latches exposed to heavy-ions over extended periods of time. For these approaches, circuit-level effects eliminate shorter pulses due to prolonged heavy-ion exposure providing the worst case estimate of measurable transients. Simulation results in the IBM 180 nm and 90 nm technologies corroborate this effect and discuss the resulting factors affecting single event (SE) error cross-sections. Experimental evaluation of such a SET pulse width characterization circuit under heavy-ion exposure showed reduced number of events measured due to total dose effects as expected. Additional experimental and simulation results show that the length of the propagation chains in the target circuit (for capturing SETs), the exposed flux and time (total dose) affect the resulting number of SEs measured.