By Topic

Novel Aluminum Segregation at NiSi/ {p}^{+} -Si Source/Drain Contact for Drive Current Enhancement in P -Channel FinFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

This letter reports the first demonstration of the integration of nickel-silicide (NiSi) source/drain (S/D) contact technology with a novel aluminum (Al) segregation at the NiSi/p +-Si interface in the S/D of p-channel FinFETs to reduce contact resistance. This leads to reduction in parasitic series resistance. We show that the addition of a low-dose (2times1014 atom/cm2) Al ion implant step in the Si S/D of p-channel FinFETs could achieve ~ 19% enhancement in drive current. This is attributed to the reduction in effective Schottky barrier height of holes at NiSi/p+-Si interface, from ~ 0.4 to ~ 0.12 eV, using Al segregation.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 1 )