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This letter reports the first demonstration of the integration of nickel-silicide (NiSi) source/drain (S/D) contact technology with a novel aluminum (Al) segregation at the NiSi/p +-Si interface in the S/D of p-channel FinFETs to reduce contact resistance. This leads to reduction in parasitic series resistance. We show that the addition of a low-dose (2times1014 atom/cm2) Al ion implant step in the Si S/D of p-channel FinFETs could achieve ~ 19% enhancement in drive current. This is attributed to the reduction in effective Schottky barrier height of holes at NiSi/p+-Si interface, from ~ 0.4 to ~ 0.12 eV, using Al segregation.