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A 10-kV Monolithic Darlington Transistor With \beta _{ \rm forced} of 336 in 4H-SiC

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6 Author(s)
Qingchun Zhang ; Cree Inc., Research Triangle Park, NC ; Jonas, C. ; O'Loughlin, M. ; Callanan, R.
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4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200 W/cm2 ( J C = 35 A/cm2 at V CE = 5.7 V) at room temperature. The current gain exhibits a negative temperature coefficient and remains as high as 135 at 200degC. The specific on-resistance is 140 mOmegamiddotcm2 at room temperature and increases at elevated temperatures. An open-emitter breakdown voltage (BV CBO) of 10 kV was achieved at a leakage current density of < 1 mA/cm2. The device exhibits an open-base breakdown voltage (BV CEO) of 9.5 kV. The high current gain of SiC Darlington transistors can significantly reduce the gate-drive power consumption with the same forward-voltage drop as that of 10-kV SiC bipolar junction transistors, thus making the device attractive for high-power high-temperature applications.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )

Date of Publication:

Feb. 2009

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