By Topic

A 10-kV Monolithic Darlington Transistor With \beta _{ \rm forced} of 336 in 4H-SiC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Qingchun Zhang ; Cree Inc., Research Triangle Park, NC ; Jonas, C. ; O'Loughlin, M. ; Callanan, R.
more authors

4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200 W/cm2 ( J C = 35 A/cm2 at V CE = 5.7 V) at room temperature. The current gain exhibits a negative temperature coefficient and remains as high as 135 at 200degC. The specific on-resistance is 140 mOmegamiddotcm2 at room temperature and increases at elevated temperatures. An open-emitter breakdown voltage (BV CBO) of 10 kV was achieved at a leakage current density of < 1 mA/cm2. The device exhibits an open-base breakdown voltage (BV CEO) of 9.5 kV. The high current gain of SiC Darlington transistors can significantly reduce the gate-drive power consumption with the same forward-voltage drop as that of 10-kV SiC bipolar junction transistors, thus making the device attractive for high-power high-temperature applications.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )