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A solid-state transceiver module for use in millimeter waves has been developed using HEMT GaAs technology. This module shown to have good performances in order to be used in active missile seekers. Despite the very good performances achieved, we show that itpsilas possible to increase them using GaN devices. This technology allows the realisation of high power, high efficiency power amplifiers, very good switches and LNA. We show that taking in account the actual trend of GaN research, itpsilas possible to foreseen the development of a such device in two or three years.