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Perpendicular L10-FePt/MgO/Fe/L10 -FePt magnetic tunnel junction (MTJ) films with the (001) texture were successfully developed to obtain a large tunnel magnetoresistance (TMR) above 100 % at room temperature. The TMR ratio in the L10-FePt/MgO/Fe/L10-FePt MTJ was strongly dependent on the Fe interfacial layer thickness. The lattice mismatch between the MgO(001) barrier layer and the L10 -FePt(001) layer is too large for the MgO barrier layer to grow epitaxially on the L10-FePt(001) layer. The insertion of the Fe interfacial layer improves the quality of the MgO(001) barrier layer and achieves an epitaxy in the L10-FePt/MgO/Fe/L10-FePt stack. As a result, the optimization of the Fe interfacial layer thickness is a key to obtain the large TMR ratio in the MgO-based MTJ with the L10-FePt electrodes.