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Low- V_{t} TaN/HfLaO n -MOSFETs Using Low-Temperature Formed Source–Drain Junctions

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4 Author(s)
Lin, S.H. ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu ; Liu, S.L. ; Yeh, F.S. ; Chin, Albert

We report low-threshold-voltage (Vt) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degC. The gate-first and self-aligned TaN/HfLaO n-MOSFETs using Ni/Sb SPD-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm2/V middots at a small 1.3-nm equivalent oxide thickness.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 1 )