Low-$V_{t}$ TaN/HfLaO $n$-MOSFETs Using Low-Temperature Formed Source–Drain Junctions

We report low-threshold-voltage (
Vt
) TaN/HfLaO
n
-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650
^deg
C. The gate-first and self-aligned TaN/HfLaO
n
-MOSFETs using Ni/Sb SPD-formed source-drain junctions showed a low
Vt
of 0.16 V and a peak electron mobility of 187 cm
²
/V middots at a small 1.3-nm equivalent oxide thickness.