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Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

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8 Author(s)
Mise, N. ; Semicond. Leading Edge Technol., Inc., Tsukuba ; Morooka, T. ; Eimori, T. ; Ono, T.
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We have proposed a single metal/dual high-k gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high-k dielectrics, such as MgO- and Al2O3-containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which will suppress the variation in device performance. Based on this device concept, we have actually fabricated W/TiN/HfMgSiON n-type MISFETs and W/TiN/HfAlSiO p-type MISFETs and have successfully demonstrated a low threshold voltage operation for both of n- and p-type MISFETs.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 1 )