By Topic

Inverse image problem of designing phase shifting masks in optical lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chan, S.H. ; Dept of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA ; Lam, E.Y.

The continual shrinkage of minimum feature size in integrated circuit (IC) fabrication incurs more and more serious distortion in the optical lithography process, generating circuit patterns deviating from the desired ones. Conventional resolution enhancement techniques (RETs) are facing critical challenges in compensating such increasingly severe distortion. The approach of inverse lithography, which is a branch of mask design methodology to treat the design as an inverse image problem, is adopted in this paper. We apply nonlinear optimization techniques to design masks with minimally distorted output. The output patterns so generated have high contrast and low dose sensitivity. We also propose a dynamic program-based initialization scheme to pre-assign phases to the layout.

Published in:

Image Processing, 2008. ICIP 2008. 15th IEEE International Conference on

Date of Conference:

12-15 Oct. 2008