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A Comparative NBTI Study of \hbox {HfO}_{2} , \hbox {HfSiO}_{x} , and SiON p-MOSFETs Using UF-OTF I_{\rm DLIN} Technique

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7 Author(s)
Shweta Deora ; Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai ; Vrajesh Dineshchandra Maheta ; Gennadi Bersuker ; Christopher Olsen
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The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO2/TiN, HfSiOx/TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-flyI DLIN technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO2 devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiOx devices. HfSiOx shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO2, which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfSiOx and HfO2 can be attributed to differences in N density in the SiO2 IL of these devices.

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IEEE Electron Device Letters  (Volume:30 ,  Issue: 2 )