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Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques

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8 Author(s)
Lupke, G. ; Inst. of Semicond. Electron. II, Rheinisch-Westfalische Tech. Hochschule, Aachen, Germany ; Wolter, F. ; Emmerichs, U. ; Meyer, C.
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We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO2 interface changes after rapid thermal annealing (RTA)

Published in:

Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE

Date of Conference:

25-29 Jul 1994