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Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate

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9 Author(s)
K. G. Wilcox ; School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom ; Z. Mihoubi ; S. Elsmere ; A. Quarterman
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A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 25 )