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A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (V th) shift of 4.5 V is achieved in a fast programming time of 100 ns.