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The Effect of Negative V_{\rm TH} of nand Flash Memory Cells on Data Retention Characteristics

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5 Author(s)
Mincheol Park ; Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin ; Eungjin Ahn ; Eunsuk Cho ; Keonsoo Kim
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We present our study on the dependence of data retention characteristics on the threshold voltage (V TH) of the cell transistor revealing the combined effect of control gate voltage and cell transistor architecture. Data retention characteristics are improved by designing a cell transistor that isolates the region where Fowler-Nordheim (FN) stress mainly occurs in tunnel oxide away from the region where maximum cell on-current flows. In the sub-50-nm region, due to short distance between the control gate and the shallow-trench isolation (STI) corner, the maximum cell on-current position is shifted from the STI corner to the channel center as control gate voltage decreases. The edge-thin tunnel oxide cell transistor, of which cell on-current flow is separated from tunneling current in negative cell V TH, shows 0.12-V superior data retention characteristic than the edge-thick tunnel oxide cell transistor at -3 V of cell transistor V TH in experiment.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )