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Silicide Schottky-Barrier Phototransistor Integrated in Silicon Channel Waveguide for In-Line Power Monitoring

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4 Author(s)
Shiyang Zhu ; Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore ; Lo, G.Q. ; Yu, M.B. ; Kwong, D.L.

An in-line power monitor with a thin nickel silicide layer placed on a silicon channel waveguide for optical absorption is proposed. A two-terminal Schottky-barrier collector phototransistor configuration is used to amplify significantly the primary photocurrent, and the Ni silicide thickness is thinned down to ~5 nm using a two-step rapid thermal annealing procedure to reduce the insertion loss. The demonstrated in-line detectors exhibit ~24-mA/W responsivity around 1550 nm with the insertion loss of ~0.8-1.2 dB. The approaches to further increase the responsivity and simultaneously decrease the insertion loss are addressed.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 3 )