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Semiconductor nanowires in InP and related material systems: MBE growth and properties

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7 Author(s)
G. E. Cirlin ; St.Petersburg Physical Technological Centre for Research and Education RAS, Russia ; V. G. Dubrovskii ; J. -C. Harmand ; G. Patriarche
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In this work, we report on the Au-assisted MBE of various InP and related material NWs on InP(111)B substrates. The influence of growth conditions on the InAsP insertion geometry and composition in InP nanowire is evidenced. Ex-situ thermal annealing produces significant changes to the PL spectra of these heterostructures. It is shown that InP/InAsP/InP heterostructures are well suited for fabrication of emitters in the telecommunication wavelength range 1.3-1.55 mum.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008