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Semiconductor nanowires in InP and related material systems: MBE growth and properties

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7 Author(s)
Cirlin, G.E. ; St.Petersburg Phys. Technol. Centre for Res. & Educ., RAS, St. Petersburg ; Dubrovskii, V.G. ; Harmand, J.C. ; Patriarche, G.
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In this work, we report on the Au-assisted MBE of various InP and related material NWs on InP(111)B substrates. The influence of growth conditions on the InAsP insertion geometry and composition in InP nanowire is evidenced. Ex-situ thermal annealing produces significant changes to the PL spectra of these heterostructures. It is shown that InP/InAsP/InP heterostructures are well suited for fabrication of emitters in the telecommunication wavelength range 1.3-1.55 mum.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008