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In this work, we report on the Au-assisted MBE of various InP and related material NWs on InP(111)B substrates. The influence of growth conditions on the InAsP insertion geometry and composition in InP nanowire is evidenced. Ex-situ thermal annealing produces significant changes to the PL spectra of these heterostructures. It is shown that InP/InAsP/InP heterostructures are well suited for fabrication of emitters in the telecommunication wavelength range 1.3-1.55 mum.