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Growth and characterization of bulk GaInSb crystals from non-stoichiometric melts

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2 Author(s)
Bliss, D. ; US Air Force Res. Lab., Hanscom AFB, MA ; Becla, Piotr

We have developed the traveling heater method (THM) using a low melting point solvent to grow alloys of GaInSb at constant composition with low defect density. The melting point is reduced by using excess antimony or indium as a solvent. By growing the crystal at low temperature it is possible to avoid the high concentration of gallium antisite defects responsible for the dominant native acceptor concentration. With reduced acceptor concentration, a significant increase in the optical transmission from 2 to 20 mum was observed in crystals grown at low temperature. A series of crystal growth runs has demonstrated the use of off-stoichiometry melts as a means to control the electrical and optical properties of GaInSb alloy crystals.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008