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High frequency characterisation of single InAs nanowire field-effect transistors

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5 Author(s)
K. Blekker ; Solid State Electronics Department, University of Duisburg-Essen, CeNIDE, Germany ; Q. T. Do ; A. Matiss ; W. Prost
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We report on a first RF characterisation of single InAs nanowire channel field-effect-transistors. The nanowires with about 30 nm diameter are transferred to a carrier substrate and contacted with a coplanar waveguide pad configuration with a pitch down to 50 mum. Magnesium oxide as well as SiNx are used as gate dielectric for high performance MISFET type field-effect-transistors. Small signal scattering parameter measurements have been performed on-wafer. The nanowire FET exhibit an ultra-small intrinsic gate-source capacitance Cgs down to a few hundred ato Farad, making a careful de-embedding of the data indispensable. First measurements have shown a maximum stable gain higher than 30 dB at low frequency and a maximum oscillation frequency of 15 GHz.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008