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InP/GaAsSb/InP multifinger DHBTs for power applications

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9 Author(s)
V. Nodjiadjim ; GIE Alcatel-Thales III-V Lab., Marcoussis, France ; M. Riet ; A. Scavennec ; P. Berdaguer
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We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum2 devices demonstrate maximum fT of 221 GHz and maximum fmax of 293 GHz when biased at JC = 370 kA/cm2 and VCE = 1.4V. Moreover we investigate the limitation of frequency performances with the number of fingers.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008