InP/GaAsSb/InP multifinger DHBTs for power applications

We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum
²
devices demonstrate maximum f
_T
of 221 GHz and maximum f
_max
of 293 GHz when biased at J
_C
= 370 kA/cm
²
and V
_CE
= 1.4V. Moreover we investigate the limitation of frequency performances with the number of fingers.