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InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

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8 Author(s)
Mourad Chtioui ; Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France ; Alain Enard ; Daniele Carpentier ; Stephan Bernard
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We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz at 70 mA.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008