By Topic

The upper limits of cut-off frequency in ultra-short gate length InP-based p-HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
R. Akis ; Department of Electrical Engineering, Arizona State University, Tempe, USA, 85287 ; N. Faralli ; D. K. Ferry ; S. M. Goodnick
more authors

Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008