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Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor

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8 Author(s)

We have fabricated and assessed 1550 nm SIBH FP lasers using a novel Ruthenium precursor for MOVPE. Low temperature analysis revealed no unexpected defects and performance is similar to standard p-n-p-n current blocking devices. Accelerated aging at 85degC indicates no significant degradation after 5,700 hours on test.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008