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Fabrication technology and device performances of ultra-short 30-nn-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs

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8 Author(s)
N. Wichmann ; Institut d¿Electronique, de Microélectronique et de Nanotechnologie IEMN U.M.R-CN.R.S. no8520, Département Hyperfréquences et Semi-conducteurs, Cité scientifique, Av. Poincaré, BP 69, 59652, Villeneuve d¿Ascq, France ; A. Shchepetov ; I. Duszynski ; Y. Roelens
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In this paper, we succeed in fabricating ultra short 30 nm gate pseudomorphic high electron mobility transistors (HEMT) with excellent cutoff frequencies. Devices with smaller Schottky barrier layer exhibited a current gain cutoff frequency fT of 450 GHz and a simultaneous maximum oscillation frequency fMAX of 500 GHz. This performance can be attributed to the use of the two-step-recessed gate technology and the maintaining of high aspect ratio in our HEMTs.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008