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A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1times1012 cm-2, respectively. To enable a maximum extrinsic transconductance gm, max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An ft of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.
Date of Conference: 25-29 May 2008