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Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy

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11 Author(s)
Michon, A. ; CNRS, Lab. de Photonique et de Nanostruct. ; Hostein, R. ; Patriarche, G. ; Beaudoin, G.
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This contribution shows that the control of the cap-layer growth rate of InAs/InP(001) quantum dots grown by metalorganic vapor phase epitaxy allows to control their emission wavelength. By varying the cap-layer growth rate over a factor 12, the emission is tuned between 1.55 and 2 mum.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008