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InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy

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11 Author(s)
Michon, A. ; Lab. de Photonique et de Nanostruct., CNRS, Marcoussis ; Hostein, R. ; Patriarche, G. ; Beaudoin, G.
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This contribution reports the growth of InAsP quantum dots on InP(001) using metalorganic vapor phase epitaxy. We show that the control of the voluntary phosphorus incorporation into the quantum dots allows both to tune their emission to 1.55 mum and to improve their optical properties.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008