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Multiple lasing lines from deep-etched photonic crystal of asymmetric muliple quantum wells

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5 Author(s)
Bai, J.C. ; Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ. ; Chiu, C.L. ; Hsin, J.Y. ; Chen, C.Y.
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A slab photonic crystal (PhC) laser was fabricated on InP substrate. The wafer consists of p-i-n laser epitaxial structure with asymmetric InGaAs/InGaAlAs multiple quantum wells. The deep-etched PhC laser of 2.76 mum-thick was achieved by ICP-RIE dry etching process using Cl2+SiCl4+CH4 mixture. Lasing spectrum shows three lasing modes at lambda = 1505, 1535, and 1551 nm, respectively.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008