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A slab photonic crystal (PhC) laser was fabricated on InP substrate. The wafer consists of p-i-n laser epitaxial structure with asymmetric InGaAs/InGaAlAs multiple quantum wells. The deep-etched PhC laser of 2.76 mum-thick was achieved by ICP-RIE dry etching process using Cl2+SiCl4+CH4 mixture. Lasing spectrum shows three lasing modes at lambda = 1505, 1535, and 1551 nm, respectively.