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340nm blue-shift in InGaAs/InAlAs quantum dots processed by SiO2 sputtering and rapid thermal annealing

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6 Author(s)
T. C. Hsu ; Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan ; T. E. Tzeng ; E. Y. Lin ; K. Y. Chuang
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The atomic intermixing effects on emission wavelength blue-shift for self-assembled InGaAs/InAlAs quantum dots on InP substrate were investigated. A large blue-shift upto 343 nm, from lambda=1632 nm to 1289 nm, was obtained by SiO2 sputtering deposition and rapid thermal annealing at 800degC.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008