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Differential absorption spectroscopy for vertically coupled InGaAs quantum dots of p-type modulation doping

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5 Author(s)
K. Y. Chuang ; Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Taiwan ; David J. Feng ; C. Y. Chen ; T. E. Tzeng
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We report the differential absorption (Deltaalpha) spectra of the vertically coupled triple-layer InGaAs quantum dots (QDs) at different reverse bias. The results show that the decrease of spacer layer thickness increases the differential absorption. Adding p-type modulation doping further increases the differential absorption amplitude at ground state.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008