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Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

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6 Author(s)
Saint-Girons, G. ; Ecole Centrale de Lyon, Univ. de Lyon, Ecully ; Regreny, P. ; Cheng, J. ; Hollinger, G.
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A new approach of monolithic integration of InP based heterostructures on silicon is proposed, based on the plastic compliant behavior of the InP/Gd2O3(111) heterointerface. When grown on a crystalline Gd2O3/Si(111) buffer, InP takes its bulk lattice parameter as soon as the growth begins, allowing the monolithic growth of good quality InAsP/InP heterostructures on Si, as attested by room-temperature photoluminescence experiments.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008

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