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Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT utilizing Ne-based atomic layer etching

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6 Author(s)
Tae-Woo Kim ; GIST, Center for Distrib. sensor network, Gwangju ; Seung Heon Shin ; Sang Park Duk ; Yeom, Geun Young
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The characteristics of 0.15 mum In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance including trasconductance (GM = 1.38 S/mm), ION/IOFF ratio (1.18 times 104), and cutoff frequency (fT = 233 GHz), mainly due to the extremely low plasma-induced damage of the ALET to the Schottky gate area.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008