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Crystal growth of compound semiconductors with low dislocation densities

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5 Author(s)
Jochen Friedrich ; Department Crystal Growth, Fraunhofer IISB, Erlangen, Germany ; Birgit Kallinger ; Isabel Knoke ; Patrick Berwian
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This paper will highlight some technological developments in the field of Vertical Gradient Freeze growth of InP and GaAs for providing substrates with low dislocation densities. Furthermore, the role of micropipes and basal plane dislocations during sublimation and epitaxial growth of SiC will be addressed. Finally, different strategies will be illustrated to achieve GaN with high structural perfection.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008