By Topic

Growth of indium phosphide bulk crystals for radiation detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Pekarek, L. ; Dept. of Chem., Inst. of Phys., Prague ; Zdansky, K. ; Prochazkova, O.

Bulk indium phosphide single crystals were grown by the liquid encapsulation Czochralski method using vertical Bridgman low pressure synthesis of poly-crystalline InP. The semi-insulating state necessary for radiation detection was created by the iron doping or iron-zinc and titanium-zinc co-doping. High temperature annealing of very pure or tantalum doped InP were also done. For characterization of InP crystals the Hall measurements and mass spectroscopy analysis were used. Crystal structure defects were studied by the etching and X-ray methods. Samples of X-ray detectors of this material were constructed and the efficiency of detection was measured.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008