By Topic

InAs quantum dot structures on InP grown by MOVPE for mid-infrared emission

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tang Xiaohong ; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore ; Yin Zongyou ; Teng Jinghua ; Du Anyan

High density, uniform InAs quantum dots (QDs) have been grown on InxGa1-xAs/InP matrix by metal-organic vapor phase epitaxy (MOVPE) using a two-step growth method. By sandwiching the InAs QDs between InxGa1-xAs barrier layers, emission wavelength of the InAs/InxGa1-xAs/InP QD structures reaches >2.3 mum.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008