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Capacitance Simulations and Measurements of 3D Pixel Sensors Under 55 MeV Proton Exposure

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4 Author(s)

3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n- and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown.

Published in:

IEEE Transactions on Nuclear Science  (Volume:55 ,  Issue: 5 )