Referenced Items are not available for this document.
3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n- and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:55
,
Issue:
5
)
Date of Publication: Oct. 2008
- Page(s):
- 2679 - 2684
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 10361694
- Digital Object Identifier :
- 10.1109/TNS.2008.2004461
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 08 December 2008
- Issue Date :
- Oct. 2008
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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