By Topic

Capacitance Simulations and Measurements of 3D Pixel Sensors Under 55 MeV Proton Exposure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n- and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:55 ,  Issue: 5 )