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Simple structured PMOSFET fabricated using molecular layer doping

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3 Author(s)
Nishizawa, J. ; Res. Inst. of Electr. Commun., Tohoku Univ., Katahira Sendai, Japan ; Aoki, K. ; Akamine, T.

The application of molecular layer doping (MLD) to the formation of shallow source and drain regions of a PMOSFET is discussed. The MLD process consists of three steps. First, the natural oxide on the Si surface is removed by thermal cleaning to expose an active Si surface. Second, a boron adsorbed layer is formed on the Si surface. Third, boron atoms undergo solid-phase diffusion from the adsorbed layer into the bulk. The electrical characteristics of the PMOSFET in the short-channel region are superior to those of devices fabricated by conventional techniques.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 3 )

Date of Publication:

March 1990

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