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Single-event charge enhancement in SOI devices

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4 Author(s)
Massengill, L.W. ; Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA ; Kerns, D.V., Jr. ; Kerns, S.E. ; Alles, M.L.

Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.<>

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Electron Device Letters, IEEE  (Volume:11 ,  Issue: 2 )