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Temperature-dependent hole and electron mobility models for CMOS circuit simulation

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2 Author(s)
Kyeong-Sik Min ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejeon, South Korea ; Kwyro Lee

Semi-empirical hole and electron mobility models with temperature dependence have been proposed for circuit simulation as well as for process characterization. These models are based on the universal dependence of low field mobility on the effective transverse field and cover a wide range of oxide thickness as well as of temperature. The accuracy of our models is justified by comparing them with experimental work reported in the literature as well as that obtained in our laboratory. They are accurate and physical enough to be suited for the circuit simulation of modern VLSI CMOS circuits with gate oxide thickness less then 400 Å in the temperature range of 250-400 K

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 11 )