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(Pb1??xSrx)(Zr0.5Ti0.5)O3 ( x= 0 to 0.65) thin films were grown on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. Films were crystallized in the single phase perovskite structure in the temperature range ( 550??700??C). Dielectric constant and loss tangent at room temperature reduced as the percentage of Sr substitution increased at the A-site of this perovskite structure. The phase transition temperature (Tc) lowered with Sr-substitution and Tc below the room temperature was obtained for composition with Sr ?? 40%. The room temperature tunability reduced with Sr substitution, however, the k-factor slightly improved.