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BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although the removal rate was lower.
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the (Volume:2 )
Date of Conference: 23-28 Feb. 2008