Referenced Items are not available for this document.
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although the removal rate was lower.
Published in:
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
(Volume:2
)
Date of Conference: 23-28 Feb. 2008
- Page(s):
- 1 - 2
- ISSN :
- 1099-4734
- E-ISBN :
- 978-1-4244-2745-1
- Print ISBN:
- 978-1-4244-2744-4
- Conference Location :
- Santa Re, NM, USA
- Digital Object Identifier :
- 10.1109/ISAF.2008.4693730
- Product Type:
- Conference Publications
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