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Second quantized state lasing and gain spectra measurements in n-type modulation doped GaAs-AlGaAs quantum-well lasers

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2 Author(s)
G. E. Kohnke ; Inst. of Opt., Rochester Univ., NY, USA ; G. W. Wicks

The emission characteristics of n-type modulation doped GaAs-AlGaAs quantum-well lasers are studied for constant doping density and stepped doping density laser cores. Constant doping density cores are found to have a shift to shorter wavelength with increasing doping density but suffer from a corresponding large increase in threshold current density. Stepped doping density cores exhibit clear wavelength shifting from the first to second quantized state transitions with increased doping near the quantum well while maintaining low threshold current densities. Threshold current densities of 440 A/cm2 are measured for second quantized state lasing in stepped core lasers. Gain spectra are measured for the stepped doping density core devices and modulation doping is shown to improve the gain bandwidth by 50% over undoped devices

Published in:

IEEE Journal of Quantum Electronics  (Volume:31 ,  Issue: 11 )